Physical mechanisms for picosecond laser ablation of silicon carbide at infrared and ultraviolet wavelengths
Fri, 2010-11-05 00:01 — Guest
Sha Tao, Ronald L. Jacobsen, and Benxin Wu
Investigations have been performed on the physical mechanisms of picosecond laser ablation of silicon carbide at 355 and 1064 nm, which have not been well understood yet. The study shows that the low-fluence ablation rates are close for 355 and 1064 nm, and the dominant material removal mechanism sh ... [Appl. Phys. Lett. 97, 181918 (2010)] published Thu Nov 4, 2010.
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