Key experimental information on intermediate-range atomic structures in amorphous GeSbTe phase change material

Shinya Hosokawa, Wolf-Christian Pilgrim, Astrid Hohle, Daniel Szubrin, Nathalie Boudet et al.
Laser-induced crystalline-amorphous phase change of Ge-Sb-Te alloys is the key mechanism enabling the fast and stable writing/erasing processes in rewritable optical storage devices, such as digital versatile disk (DVD) or blu-ray disk. Although the structural information in the amorphous phase is e ... [J. Appl. Phys. 111, 083517 (2012)] published Thu Apr 19, 2012.

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