Increasing Si photodetector photosensitivity in near-infrared region and manifestation of optical amplification by dressed photons

Abstract  
We fabricated a novel photodetector by subjecting a Si crystal having a p–n homojunction to phonon-assisted annealing. The
photosensitivity of this device for incident light having a wavelength of 1.16 μm or greater was about three times higher
than that of a reference Si-PIN photodiode. The photosensitivity was increased for incident light with a wavelength of 1.32 μm
by applying a forward current. When the forward current density was 9 A/cm2, a photosensitivity of 0.10 A/W was achieved. This value is at least 4000 times higher than the zero-bias photosensitivity.
This remarkable increase was due to the manifestation of optical amplification cause by the forward current injection. For
a forward current density of 9 A/cm2, the small-signal gain coefficient of the optical amplification was 2.2×10−2, and the saturation power was 7.1×102 mW.

  • Content Type Journal Article
  • Pages 1-6
  • DOI 10.1007/s00340-012-5077-7
  • Authors
    • H. Tanaka, Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
    • T. Kawazoe, Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
    • M. Ohtsu, Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

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