Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods
Mon, 2012-07-02 02:00 — Guest
Tetsuya Shimogaki, Kota Okazaki, Daisuke Nakamura, Mitsuhiro Higashihata, Tanemasa Asano, Tatsuo Okada
The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P^+) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of ... [Opt. Express 20, 15247-15252 (2012)]
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