This study proposes a beam shaper for converting a circle beam profile generated with a Gaussian intensity distribution by an 808 nm diode laser into a line beam profile for silicon surface treatment applications. To produce a hand-held and low-cost device with a large spot-size laser, this study uses a portable optical system consisting of a diode laser source, a collimator, a cylindrical lens, and a plano-convex lens to generate an approximately 40 × 3:5mm2 line beam profile at a working distance of 200 mm. The silicon surface treated by the line-shaped laser beam has significantly reduced reflectance spectra. The proposed system is also suitable for the surface cleaning of materials.
The application of blue laser lithography for creating antireflective submicron structures on a crystalline silicon substrate was evaluated. The assembled blue laser lithography system was obtained by modifying a commercial blue laser optical pickup head and consisting of a 405-nm-wavelength blue laser and a 0.85-numerical-aperture objective lens. Si substrates were patterned with submicron column patterns of various periods and aspect ratios by blue laser lithography using a sputtered Ge-Sb-Sn-O layer as a resist. The reflectance of the patterned Si substrate decreased to 3% on average in the 300–1000 nm wavelength range, with a low sensitivity to the angle of incident light. Such patterned substrates showed potential for application in crystalline Si solar cells.
This study presents a portable laser machining system that consists of a fiber-optic diode laser source with a wavelength of 808 nm, optic/opto-mechanical components, a laser scanning module, and a laser energy control module. The laser beam quality was measured at different operation frequencies during system evaluation. The experimental results of beam profile evaluation indicate that the enlarged collimated beam was the TEM00 mode with a roundness of approximately of 96%. The output laser power level increased as the pulse frequency increased during laser power evaluation. To control the rotating angle of the galvanometric scanning system, the deflective angle was adjusted using a 0.192 voltage to obtain a deflective value of 1mm and the maximum scan field of 100 × 100mm2. The laser source operated at different frequencies, with pulse widths ranging from 530 to 48 μs. Finally, the proposed machine can also be used for black thick paper laser writing applications.