Virtual Journal of Laser

G. Impellizzeri, E. Napolitani, S. Boninelli, G. Fisicaro, M. Cuscuna et al.
An experimental and theoretical study of the effect of excimer laser annealing (ELA) on B redistribution and electrical activation in Ge is reported. We performed detailed structural, chemical, and electrical characterizations of Ge samples implanted with B (20 keV, 1 x 10, or 1 x 10 B/cm) and p ... [J. Appl. Phys. 113, 113505 (2013)] published Tue Mar 19, 2013.

E. A. Avrutin and B. S. Ryvkin
An analytical model is developed for the carrier density distribution and the associated Dember type electric field/voltage in the waveguide layer of a high-power semiconductor laser for arbitrary levels of doping and injection. Nonlinear resistance of the waveguide layer is analysed; it is shown th ... [J. Appl. Phys. 113, 113108 (2013)] published Tue Mar 19, 2013.

Haizhong Guo, Shufang Wang, Le Wang, Kui-juan Jin, Shanshan Chen et al.
Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented CaCoO (CCO) thin films on SrTiO substrates and CaCoO/SrTiNbO p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, ... [J. Appl. Phys. 113, 113707 (2013)] published Mon Mar 18, 2013.

Marjan Mohebbi, Khabat Ebnabbasi, and Carmine Vittoria
The magnetoelectric (ME) effect in M-type hexaferrite thin films is reported. Prior to this work, the ME effect in hexaferrite materials was observed only in bulk polycrystalline materials. Thin films of SrCoTiFeO were grown on sapphire (0001) using pulsed laser deposition. The thin films were chara ... [J. Appl. Phys. 113, 17C710 (2013)] published Mon Mar 18, 2013.

Zhiping Wang and Benli Yu
We investigate optical bistability (OB) behavior in an asymmetric three-coupled quantum well structure inside a unidirectional ring cavity. By controlling the assisting coherent driven field and the frequency detunings of the two control laser fields, we find that the appearance and disappearance of ... [J. Appl. Phys. 113, 113101 (2013)] published Fri Mar 15, 2013.

Dipak Kumar Baisnab, M. P. Janawadkar, Shilpam Sharma, R. M. Sarguna, L. S. Vaidhyanathan et al.
Thin film trilayers of PrCaMnO/YBaCuO/PrCaMnO have been deposited on MgO substrate by pulsed laser deposition technique. The film thicknesses were selected so that in one of the trilayers, the bottom PrCaMnO layer is thin, and hence, subjected to substrate induced strain, while in another trilayer, ... [J. Appl. Phys. 113, 113902 (2013)] published Fri Mar 15, 2013.

Rudiger Moser, Christian Gossler, Michael Kunzer, Klaus Kohler, Wilfried Pletschen et al.
The development of a process chain allowing for rapid prototyping of GaN-based light-emitting diodes (LEDs) is presented, which does not rely on photolithography. Structuring of the epitaxial layers is realized by direct-writing laser ablation, allowing a flexible chip layout that can be changed rap ... [J. Appl. Phys. 113, 103107 (2013)] published Thu Mar 14, 2013.

Christian Mix and Gerhard Jakob
Single phase BiFeO (BFO) thin films have been grown strained on different substrates by pulsed laser deposition. The crystal structure and symmetry were investigated by detailed X-ray diffraction and reciprocal space maps as a function of the layer thicknesses of BFO and LaSrMnO (LSMO) buffer layers ... [J. Appl. Phys. 113, 17D907 (2013)] published Wed Mar 13, 2013.

X. G. Chen, J. B. Fu, C. Yun, Y. B. Yang, S. Q. Liu et al.
The bipolar resistance switching behavior was observed in the epitaxially grown CeO/La(SrCa)MnO (CeO/LSCMO) heterojunctions on SrTiO substrate using pulsed laser deposition technology. It was found that the magnetization of CeO/LSCMO heterojunction varies with the resistance state of the device when ... [J. Appl. Phys. 113, 17C708 (2013)] published Wed Mar 13, 2013.

T. C. Han, C. T. Chen, S. S. Pan, and J. G. Lin
Orthorhombic HoMnO thin films with a-axis orientation are epitaxial grown on Nb-doped SrTiO(110) substrate using pulsed laser deposition technique to fabricate all-oxide p-n heterojunctions. The structural, magnetic, and electrical properties of heterostructures are measured. The temperature-depende ... [J. Appl. Phys. 113, 17C709 (2013)] published Wed Mar 13, 2013.