Journal of Applied Physics

Laser induced effects on ZnO targets upon ablation at 266 and 308 nm wavelengths

Maria Jadraque, Concepcion Domingo, and Margarita Martin
The development of structural changes in ZnO targets, upon laser irradiation at the wavelengths of 266 and 308 nm, is studied by Raman spectroscopy. At the wavelength of 308 nm, oxygen vacancies are found to develop monotonically with increasing laser intensity. At 266 nm, a structural change in ... [J. Appl. Phys. 104, 024306 (2008)] published Mon Jul 21, 2008.

Preparation and characterization of Al[sub 2]O[sub 3]/Y[sub 3]Al[sub 5]O[sub 12]/ZrO[sub 2] ternary hypoeutectic in situ composites by laser rapid solidification

Haijun Su, Jun Zhang, Junjie Tian, Lin Liu, and Hengzhi Fu
The directionally solidified oxide eutectic in situ composite is one of the most promising high-temperature structural materials in oxidizing environments. Pore-free rods and plates of ternary AlO/YAlO (YAG)/ZrO hypoeutectic in situ composites with hypoeutectic composition (71 mol % AlO, 17 mol % ... [J. Appl. Phys. 104, 023511 (2008)] published Fri Jul 18, 2008.

Optical intensity analyses of Er[sup 3+]:YAlO[sub 3]

Dhiraj K. Sardar, Sreerenjini Chandrasekharan, Kelly L. Nash, and John B. Gruber
Analyses of the optical absorption and emission intensities are performed on Er ions doped into yttrium orthoaluminate YAlO to assess this material as a laser source. The JuddOfelt model is applied to the room temperature absorption intensities of Er in YAlO to obtain the phenomenological intensity ... [J. Appl. Phys. 104, 023102 (2008)] published Thu Jul 17, 2008.

Fluctuation studies in interaction of lasers with two-photon media

H. Bohidar and S. Chopra
The propagation of a laser beam through a two-photon absorber (TPA) is discussed for the incident laser working at, above, and below its threshold of oscillation. It is shown that the fluctuation behavior characterized by the normalized moments /, /, and / and the variances <(DeltaI)> and <(Deltan)> ... [J. Appl. Phys. 51, 4752 (2008)] published Wed Jul 9, 2008.

Modeling of the gain and temperature in high pressure, ejector type chemical oxygen-iodine lasers and comparison to experiments

K. Waichman, B. D. Barmashenko, and S. Rosenwaks
The results of three-dimensional computational fluid dynamics model calculations are compared to available experimental results [V. D. Nikolaev et al., IEEE J. Quantum Electron. 38, 421 (2002)]. It is shown that the model is applicable to high pressure, ejector type chemical oxygen-iodine laser (COI ... [J. Appl. Phys. 104, 013113 (2008)] published Tue Jul 15, 2008.

Characterization of out-of-band radiation and plasma parameters in laser-produced Sn plasmas for extreme ultraviolet lithography light sources

S. Namba, S. Fujioka, H. Sakaguchi, H. Nishimura, Y. Yasuda et al.
Out-of-band (OOB) radiation, in contrast to the in-band radiation at 13.5 nm in a 2% bandwidth, emitted from dense tin plasmas generated by a laser was investigated for application as an extreme ultraviolet lithography light source. It was found that the continuum spectrum, which overwhelms the atom ... [J. Appl. Phys. 104, 013305 (2008)] published Mon Jul 14, 2008.

Surface accumulation of Te atoms in laser melted Te-implanted silicon

S. U. Campisano, P. Baeri, M. G. Grimaldi, G. Foti, and E. Rimini
The fraction of Te atoms accumulated on the surface after pulsed laser melting of ion-implanted silicon depends on the implantation range. The experimental profiles can be fitted by a numerical calculation, taking into account the diffusion in the liquid phase, the interface velocity, and the interf ... [J. Appl. Phys. 51, 3968 (2008)] published Wed Jul 9, 2008.

Laser annealing of low-fluence ion-implanted silicon

S. Prussin and W. von der Ohe
Ruby laser pulses of 1.52.5 J cm were shown to be effective in dissolving defect nuclei in {100} and {111} silicon surfaces implanted with 1010 B cm and (15) x 10 P cm. No melting and only partial electrical activation appear to occur. A sequential moderate thermal anneal, 10 min at 1000 degrees C, ... [J. Appl. Phys. 51, 3853 (2008)] published Wed Jul 9, 2008.

Saturation of absorption in p-Ge using picosecond CO[sub 2] laser pulses

H. S. Kwok
A time-resolved measurement on the recovery of saturation in p-Ge was performed with picosecond CO laser pulses. It was directly confirmed that the relaxation of hole excitation in p-Ge was faster than 40 psec and that this type of measurement can provide additional temporal information on picosecon ... [J. Appl. Phys. 51, 3837 (2008)] published Wed Jul 9, 2008.

Influence of lateral modes on the first derivative of the I-V characteristic of buried or mesa stripe geometry injection lasers

J. E. Dmochowski and L. J. Dobaczewski
The theoretical model proposed in the paper explains the influence of an inhomogeneous laser radiation in the junction plane upon the behavior of the first derivative I dV/dI above threshold. These inhomogeneities are connected with the existence of lateral modes. Calculations are carried out for mo ... [J. Appl. Phys. 51, 4622 (2008)] published Wed Jul 9, 2008.

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