Virtual Journal of Laser

L. M. Johnson and G. W. Pratt, Jr.
The possibility of generating extremely intense picosecond pulses at 5.3 [mu]m by frequency doubling a strong CO laser pulse in Te is demonstrated. It is shown that free carriers generated by two-photon absorption at the leading edge of the second harmonic perturb the indices of refraction and great ... [Appl. Phys. Lett. 33, 1002 (2008)] published Fri Aug 8, 2008.

P. A. Barnes, H. J. Leamy, J. M. Poate, S. D. Ferris, J. S. Williams et al.
We report the formation of Ohmic contacts to high-dose (~10 cm) Te-implanted n-type GaAs annealed with a Q-switched Nd : YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific con ... [Appl. Phys. Lett. 33, 965 (2008)] published Fri Aug 8, 2008.

D. E. Thompson, D. B. Anderson, S. K. Yao, and B. R. Youmans
Rotation-sensitive fiber-ring interferometers have been demonstrated using balanced heterodyne phase-detection techniques. Red He/Ne and infrared (GaAl)As lasers were employed with balanced elasto-optic frequency shifters as sources. Rotation-induced phase shift (Sagnac effect) was demonstrated usin ... [Appl. Phys. Lett. 33, 940 (2008)] published Fri Aug 8, 2008.

Wayne Lo and Don E. Swets
We have fabricated PbSSe homojunction diode lasers which operate up to 90 K cw and 140 K pulsed. Photon confinement was achieved by a carrier-concentration profile rather than the usual compositional heterojunction. This results in a tuning range of 350 cm under cw operation. ... [Appl. Phys. Lett. 33, 938 (2008)] published Fri Aug 8, 2008.

D. R. Scifres, R. D. Burnham, and W. Streifer
Five optically coupled narrow stripe (3.5 [mu]m) GaAs/GaAlAs semiconductor lasers on 8-[mu]m centers are operated as a spatially coherent phase-locked laser array. Output beams with less than 2 degrees divergence are observed up to 60 mW/facet output with a quantum efficiency of greater than 25%/fa ... [Appl. Phys. Lett. 33, 1015 (2008)] published Fri Aug 8, 2008.

H. Imai, M. Morimoto, H. Sudo, T. Fujiwara, and M. Takusagawa
The catastrophic degradation of GaAlAs DH laser diodes is examined with the application of pulsed or dc current. The dependence of the pulsewidth on the degradation is measured using samples with or without facet coating. The light output P at which the catastrophic degradation occurs decreases with ... [Appl. Phys. Lett. 33, 1011 (2008)] published Fri Aug 8, 2008.

J. Milewski, M. Brunne, B. Polanowski, J. Stanco, A. Yu. Volkov et al.
The small-signal gain of cw CO and/or NO mixing gasdynamic lasers has been measured by varying the cavity losses with the aid of two rotating coupled NaCl plates placed within the cavity and looking for the generation cutoff point. The saturation parameter has been determined on the basis of measure ... [Appl. Phys. Lett. 33, 1007 (2008)] published Fri Aug 8, 2008.

J. Duran, P. Evesque, and M. Billardon
A tunable amplification around 3600 A has been demonstrated at low temperatures in the low-energy side of the emission band of CaO crystals doped with F centers. The pumping power was delivered by a pulsed nitrogen laser and the optical gain was measured in a coaxial configuration. The observed ampl ... [Appl. Phys. Lett. 33, 1004 (2008)] published Fri Aug 8, 2008.

J. H. Wakefield and J. Liesegang
The attenuation coefficients kappa and wave speeds v have been measured for SAW (surface acoustic waves) ~5 MHz propagating on several polished flat polycrystalline metal surfaces. Laser interferometry techniques were used to measure standing-wave coefficients in such a way as to relate conveniently ... [Appl. Phys. Lett. 33, 981 (2008)] published Fri Aug 8, 2008.

G. Vitali, M. Bertolotti, and G. Foti
A structure change from a polycrystal to single-crystal layer in ion-implanted Si samples has been obtained by single-pulse ruby-laser irradiation with a power density threshold of about 70 MW cm (pulse length 50 nsec). Under these conditions surface mechanical damage is produced. A laser pulse trai ... [Appl. Phys. Lett. 33, 1018 (2008)] published Fri Aug 8, 2008.